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SI1303EDL New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.430 @ VGS = -4.5 V -20 20 0.480 @ VGS = -3.6 V 0.700 @ VGS = -2.5 V ID (A) "0.72 "0.68 "0.56 SOT-323 SC-70 (3-LEADS) G 1 Marking Code 3 D LD XX YY Lot Traceability and Date Code S 2 Part # Code Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C ID TA = 70_C IDM IS PD TJ, Tstg -0.28 0.34 0.22 -55 to 150 Symbol VDS VGS 5 secs Steady State -20 "12 Unit V "0.72 "0.58 "2.5 "0.67 "0.54 A -0.24 0.29 W 0.19 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71094 S-99400--Rev. A, 29-Nov-99 www.siliconix.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 315 360 285 Maximum 375 430 340 Unit _C/W 1 Si1303DL Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "4.5 V VDS = -20 V, VGS = 0 V VDS = -20 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -1 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = -3.6 V, ID = -0.7 A VGS = -2.5 V, ID = -0.3 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -10 V, ID = -1 A IS = -1 A, VGS = 0 V -2.5 0.360 0.400 0.560 1.7 -1.2 0.430 0.480 0.700 S V W -0.6 "1 -1 -5 V mA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1 A, di/dt = 100 A/ms VDD = -10 V, RL = 10 W 10 V, ID ^ -1 A, VGEN = -4.5 V RG = 6 W 1A 4 5 V, VDS = -10 V VGS = -4.5 V, ID = -1 A 10 V, 45V 1 1.9 0.45 0.44 180 410 560 530 435 300 655 900 850 700 ns 2.5 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 6 VGS = 4.5 V 5 I D - Drain Current (A) 4V 3.5 V 5 I D - Drain Current (A) 6 Transfer Characteristics TC = -55_C 25_C 4 4 3 3V 3 125_C 2 2.5 V 2V 2 1 1, 1.5 V 0 0 2 4 6 8 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) www.siliconix.com S FaxBack 408-970-5600 VGS - Gate-to-Source Voltage (V) Document Number: 71094 Pending--Rev. A, 09-Nov-99 2 SI1303EDL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On Resistance vs. Drain Current 2.0 r DS(on) - On-Resistance ( W ) 250 Vishay Siliconix Capacitance VGS = 2.5 V 1.2 C - Capacitance (pF) 1.6 200 Ciss 150 0.8 VGS = 3.6 V 0.4 VGS = 4.5 V 100 Coss 50 Crss 0 0 1 2 3 4 5 6 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 12 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 1 A 9 1.6 On Resistance vs. Junction Temperature VGS = 4.5 V ID = 1 A 1.2 6 r DS(on) - On-Resistance (W) (Normalized) 2 3 4 5 0.8 3 0.4 0 0 1 Qg - Total Gate Charge (nC) 0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source Drain Diode Forward Voltage 10 On Resistance vs. Gate to Source Voltage 2.5 I S - Source Current (A) 1 r DS(on) - On-Resistance ( W ) TJ = 150_C 2.0 1.5 ID = 1 A 0.1 TJ = 25_C 0.01 1.0 0.5 0.001 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) 0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Document Number: 71094 Pending--Rev. A, 09-Nov-99 www.siliconix.com S FaxBack 408-970-5600 3 Si1303DL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Current vs. Gate Source Voltage 1600 4000 1000 100 10 IG ( m A) 800 IGSS (mA) @ T = 25_C 400 1 0.1 0.01 IG (mA) @ 25_C 0.001 0 0 3 6 9 12 VGS - Gate-to-Source Voltage (v) 0.0001 0.1 1 VGS - Gate-to-Source Voltage (v) 10 20 IG (mA) @ 150_C Gate-Source Voltage vs. Gate-Current 1200 IGSS ( m A) Threshold Voltage 0.4 20 Single Pulse Power 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 16 12 TA = 25_C 8 0.1 0.0 4 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 10 100 600 TJ - Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction to Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 360_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.siliconix.com S FaxBack 408-970-5600 4 Document Number: 71094 Pending--Rev. A, 09-Nov-99 SI1303EDL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction to Foot 2 1 Duty Cycle = 0.5 Vishay Siliconix Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71094 Pending--Rev. A, 09-Nov-99 www.siliconix.com S FaxBack 408-970-5600 5 |
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